MRF9080LR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for GSM 900 MHz frequency band, the high gain and broadband
performance of this device make it ideal for large-signal, common-source
amplifier applications in 26 volt base station equipment.
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Typical Performance for GSM Frequencies, 960 MHz, 26 Volts
Output Power @ P1db: 75 Watts
Power Gain @ P1db: 18.5 dB
Efficiency @ P1db: 55%
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Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 90 Watts CW
Output Power
Features
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Internally Matched for Ease of Use
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High Gain, High Efficiency and High Linearity
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Integrated ESD Protection
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Designed for Maximum Gain and Insertion Phase Flatness
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Excellent Thermal Stability
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Characterized with Series Equivalent Large-Signal Impedance Parameters
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Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40μ″ Nominal.
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RoHS Compliant
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In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
- 0.5, +65
Vdc
Gate-Source Voltage
VGS
- 0.5, +15
Vdc
Total Device Dissipation @ TC
=
25
°C
Derate above 25°C
PD
250
1.43
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
RθJC
0.7
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M1 (Minimum)
Document Number: MRF9080
Rev. 8, 10/2008
Freescale Semiconductor
Technical Data
MRF9080LR3
920-960 MHz, 75 W, 26 V
LATERAL N-CHANNEL
RF POWER MOSFET
CASE 465-06, STYLE 1
NI-780
LIFETIME BUY
LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09
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Freescale Semiconductor, Inc., 2008. All rights reserved.
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